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 Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
MJ15001
DESCRIPTION With TO-3 package Complement to type MJ15002 Wide area of safe operation APPLICATIONS For high power audio,disk head positioners and other linear applications
PINNING(see Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION
Absolute maximum ratings(Ta=ae )
SYMBOL VCBO VCEO VEBO IC IB IE PD Tj Tstg PARAMETER
Collector-base voltage

Collector-emitter voltage
INC
Emitter-base voltage
Collector current
E SEM ANG H
Open base TC=25ae
Open emitter
OND IC
CONDITIONS
TOR UC
VALUE 140 140 5 15 5 -20 200 200 -65~200
UNIT V V V A A A W ae ae
Open collector
Base current
Emitter current Total power dissipation Junction temperature Storage temperature
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal resistance junction to case MAX 0.875 UNIT ae /W
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN
MJ15001
SYMBOL
TYP.
MAX
UNIT
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.2A ;IB=0
140
V
VCEsat
Collector-emitter saturation voltage
IC=4A; IB=0.4A
1.0
V
VBE
Base-emitter on voltage
IC=4A ; VCE=2V
2.0
V
ICEO
Collector cut-off current
VCE=140V; IB=0 VCE=140V; VBE(off)=1.5V TC=150ae VEB=5V; IC=0
0.25 0.1 2.0 0.1
mA
ICEX
Collector cut-off current
mA
IEBO
Emitter cut-off current
mA
hFE
DC current gain
IC=4A ; VCE=2V
Is/b
IN
Second breakdown collector current With base forward biased

VCE=40Vdc,t=1s, Nonrepetitive
COB
Output capacitance
fT
Transition frequency
CHA
E SEM NG
VCE=100Vdc,t=1s, Nonrepetitive
OND IC
TOR UC
5 0.5 1000 2
25
150
A
IE=0 ; VCB=10V;f=1.0MHz
pF
IC=0.5A ; VCE=10V;f=0.5MHz
MHz
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
MJ15001

CHA IN
E SEM NG
OND IC
TOR UC
Fig.2 outline dimensions (unindicated tolerance:A
0.1mm)
3


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